Vertical alignment control of self-ordered multilayered Ge nanodots on SiGe

Abstract Self-ordered multilayered Ge nanodots with SiGe spacers on a Si 0.4 0.6 virtual substrate are fabricated using reduced-pressure chemical vapor deposition, and the mechanism of vertical ordering is investigated. The process conditions layer deposition H 2 -GeH 4 at 550 °C -SiH 500 °C–550 °C, respectively. By depositing or increasing content, surface becomes smooth, resulting in vertically aligned to reduce strain energy. prefer grow nanodot where relatively tensile strained due buried underneath. lowering checkerboard-like forms, following staggered positions laterally along elastically soft 〈100〉 direction without pre-structuring from distribution.